Abstract
In this work, CD (critical dimension) etching bias loading performance between dense and isolated (ISO) line was systematically investigated on Metal Hard Mask (M-HM) etch process in the scope of chemical gas, source power, pressure, bias power, and ESC temperature. Particularly, a CH4 based plasma curing upon photo resist mask was found with special capability to control the dense & ISO CD loading while keeping an on-target dense CD if it was properly applied. Furthermore, the remarkable impact of etch chemical gas on CD loading was also noticed between Cl2-based and HBr-based BARC open step. Besides, the stress and post-etch profile of M-HM were also found impacting CD loading performance. Based on these findings, a solution was successfully demonstrated on a case of electrical interconnection improvement between tungsten contact and copper trench.
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