Abstract
Cd and impurity redistribution in the vicinity of CdS/CIGS interface is studied by means of atom probe tomography (APT). We find an increase of the Cd content in the CIGS layer and redistribution of O at the CdS/CIGS interface after annealing the samples at 200 °C, 250 °C, or 300 °C. Very small amounts (∼0.1 at. %) of Na impurity where observed at the p-n junction independent on the heat treatment. Simultaneously, the I–V measurements of the treated samples show a drop in the open circuit voltage and thus of the efficiency compared to the untreated sample. The effect of Cd diffusion in CIGS and of O and Na segregation at the CdS/CIGS interface on the cell performance is discussed.
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