Abstract
The vertical unseeded Bridgman growth of Cd 1−y Zn y Te (y = 0.04−0.045 ) is described. Crystals of 65 mm diameter and total mass 2400 g have been obtained. The influence of annealing Cd 1−y Zn y Te substrates has been investigated. The annealing, which reduced remaining strain and tellurium inclusions and precipitates, leads to a very suitable epitaxial layer quality used for the production of two-dimensional IR detector arrays.
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