Abstract
The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd 1− x Zn x Te crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd 1− x Zn x Te crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd 1− x Zn x Te. Three sets of Cd 1− x Zn x Te ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd 0.85Zn 0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.
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