Cd 0.8Mn 0.2Te:(In/Al) – deep level transient spectroscopy

Abstract

Deep levels in Cd 0.8Mn 0.2Te doped with In and Al were studied with Deep Level Transient Spectroscopy. In In-doped Cd 0.8Mn 0.2Te, five electron traps were observed with activation energies of 0.23, 0.28, 0.38, 0.48 and 0.65 eV. In the material doped with Al, three electron traps were found with activation energies equal to 0.33, 0.47 and 0.76 eV. Metastable effects due to DX centers have been observed only for the In-doped samples. The value of binding energy for In-related DX center in Cd 0.8Mn 0.2Te obtained experimentally was found to be equal to 0.18 eV.