Abstract
We performed reactive ion etching (RIE) in plasma to transfer patterns into (100), (110), and (211)A wet-etch exposed in InP(100) wafers. At a power, pressure, self-bias, and substrate temperature of 100 W, 0.8 Pa, , and 25°C, respectively, etching rates were: ; ; , respectively. Original and dry-etched (100) surfaces exhibited root-mean-square roughness and 1.65 nm, respectively. suggests that the etching removed surface chlorides more efficiently from the slanted (211)A and (110) facets than from the normal-incidence (100) surface.
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