Abstract
The recent observation of strong electroabsorption effects in AlGaAs/GaAs multiple quantum wells (MQWs) has raised the possibility of CCD-addressed spatial light modulators (SLMs) having much greater depth of modulation than obtainable with the Franz-Keldysh effect. In this paper, we review our work on CCD modulators employing each of these effects. The results from MQW structures are particularly promising and include optical modulation values as large as 50% at 852 nm. In addition, we have recently reported a new AlGaAs/GaAs CCD in which carriers are confined to a quantum well. This device was combined with a MQW structure, thus demonstrating the feasibility of integrating CCD and MQW structures on a common substrate.
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