Abstract
This paper reports on low-threshold InGaAs/InGaAsP multiple quantum well (MQW) lasers emitting at a wavelength of 1.52 μm. Separate confinement heterostructure (SCH) lasers were grown using chemical beam epitaxy (CBE) with source material pressure-control systems. A continuous wave threshold current of 12 mA and internal quantum efficiency of 73% (both facets) are observed in uncoated double-channel planar buried heterostructure (DCPBH) lasers. The internal loss is 15 cm -1. More than 90% of 50 laser chips have a threshold current of 15±3 mA.
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