Abstract
We demonstrate that the chemical beam epitaxial (CBE) technique is suitable for growing high quality AlGaAs/GaAs heterostructures for high-speed and photonic device applications. Substantial improvements in electrical and optical properties of Al x Ga 1- x As were achieved using triisobutylaluminum (TIBAl) instead of triethylaluminum source. Highly uniform Al x Ga 1- x As:Si and Al x Ga 1- x As:C films with very low surface defect density were grown. The electrical and optical properties of these materials are comparable to those of high quality organometallic vapor phase epitaxial (OMVPE) Al x Ga 1- x As. CBE grown 0.25 °m gate length modulation-doped field effect transistors (MODFET) have been fabricated. MODFETs having f T greater than 38 GHz and a 1.7 dB noise figure with 10 dB associated gain at 18 GHz are reported. Device quality AlGaAs/GaAs heterojunction bipolar transistor (HBT), electro-optic modulator and light emitter array structures grown by CBE technique were also demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
