C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers

S.T Fu,K.H.G Duh,P.M Smith,T.H Yu,P.C Chao,L.F Lester,J.J Komiak

doi:10.1109/gaas.1993.394435

C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers

S.T Fu, K.H.G Duh + Show 5 more

https://doi.org/10.1109/gaas.1993.394435

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Publication Date: Oct 10, 1993

Citations: 12

#Pseudomorphic High Electron Mobility Transistors #GaAs-based Pseudomorphic High Electron Mobility + Show 8 more

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Abstract

The authors present preliminary results of the effort to develop C-band high power internally-matched GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) power amplifiers. Previously developed 0.25 /spl mu/m/spl times/8 mm PHEMT chips had been selected as the building block of the power amplifiers. The single chip units are comprised of one 8 mm PHEMT chip and its input and output matching circuits. These parts are integrated into a small copper carrier. By combining four 8 mm chips with lumped elements and a distributed Wilkinson power divider/combiner, the units were assembled within the same type of carrier and delivered 20 W output power. >

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