Abstract
We demonstrate lasing emission of optically excited InGaN LD structures without intentional resonant cavity formation. We observe the equal mode-spacing character of this effect in the back-scattering geometry after exceeding the threshold excitation intensity. The homogeneity of the effect and stable mode spacing exclude participation of defects or wafer edges in lasing. We propose a lasing mechanism based on optically excited 2D electron–hole plasma oscillations, which act as a dynamical grating and resonantly couple the lasing modes separated by the plasma frequency, similar to the case of DFB lasers. The observed anomalous mode spacing is determined by the eigenfrequency of the plasma oscillations.
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