Abstract
We consider the combination of nonequilibrium Auger suppression with cavity enhancement, this being either resonant cavity enhancement (RCE) or photonic crystal enhancement (PCE) as a means to suppress generation-recombination processes in intrinsic semiconductor-based long wavelength infrared detectors. The aim is to approach the background-limited operation of narrow-bandgap compound semiconductor photodetectors in the 3-14 /spl mu/m infrared wavelength range without cooling or possibly with slight cooling. Auger generation-recombination processes are suppressed utilizing exclusion, extraction, magnetoconcentration, or some of their combinations. The residual radiative recombination is removed by enclosing the detector active area into a cavity with a radiative shield (resonant cavity or photonic crystal) and using the benefits of reabsorption (photon recycling) to effectively increase radiative lifetime.
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