Abstract
We report third-harmonic generation (THG) of terahertz free-electron laser (FEL) pulses in Si:B at cryogenic temperatures. The physical mechanism of THG is attributed to the free-carrier χ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(3)</sup> nonlinearity due to the non-parabolicity of the valence band. The value of χ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(3)</sup> increases as a function of the carrier density, which are generated via impact ionization of the boron dopants under irradiation by the FEL pulses. By positioning the Si:B in a one-dimensional photonic crystal (1D PC) cavity, the measured THG intensity increases by a factor of about 200.
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