Abstract
Microwave optomechanical circuits have been demonstrated to be powerful tools for both exploring fundamental physics of macroscopic mechanical oscillators, as well as being promising candidates for on-chip quantum-limited microwave devices. In most experiments so far, the mechanical oscillator is either used as a passive element and its displacement is detected using the superconducting cavity, or manipulated by intracavity fields. Here, we explore the possibility to directly and parametrically manipulate the mechanical nanobeam resonator of a cavity electromechanical system, which provides additional functionality to the toolbox of microwave optomechanics. In addition to using the cavity as an interferometer to detect parametrically modulated mechanical displacement and squeezed thermomechanical motion, we demonstrate that this approach can realize a phase-sensitive parametric amplifier for intracavity microwave photons. Future perspectives of optomechanical systems with a parametrically driven mechanical oscillator include exotic bath engineering with negative effective photon temperatures, or systems with enhanced optomechanical nonlinearities.
Highlights
Microwave optomechanical circuits have been demonstrated to be powerful tools for both exploring fundamental physics of macroscopic mechanical oscillators, as well as being promising candidates for on-chip quantum-limited microwave devices
There are increasing efforts taken towards building passive and active quantum-limited microwave elements for quantum technologies based on microwave optomechanical circuits, connecting the fields of microwave optomechanics, circuit quantum electrodynamics and quantum information science[18,19,20]
We have demonstrated an electromechanical cavity with mechanical parametric driving
Summary
The transmission spectrum of the cavity around its resonance frequency is shown in Fig. 1e; for details on the device modeling and fitting, see Supplementary. The nanobeam has a width w = 150 nm, a total thickness t = 143 nm (of which ~83 nm are Si3N4 and 60 nm are MoRe) and a length r = 100 μm. It is separated from the center conductor of the cavity by a ~200-nmwide gap (cf Fig. 1c) and we estimate the electromechanical coupling strength to be g0 = 2π ⋅ 0.9 Hz. More design and fabrication details are described in the Methods section and
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