Cavities at the Si projected range by high dose and energy Si ion implantation in Si

Abstract

Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 × 10 16) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 × 10 16 He cm −2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 °C to allow the thermal growth of He-cavities, located between sample surface and the projected range ( R p) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p(He) on all annealed samples, but also at the R p(Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 °C only in the presence of He.