Abstract
The damage caused by reactive ion beam etching (RIBE) using CO/NH3 and CH3OH chemicals was investigated for Ni-Fe films thinner than 20 nm. Measurement of the changes in magnetization of films etched at a stage temperature from 40 to 100ºC and a bias power from 100 to 500 W revealed that the dominant damage with CO/NH3 was chemical, while that with CH3OH was physical. The amount of damage in the latter case was 1/3 to 1/2 that in the former case. The effect of RIBE on the soft magnetic properties was also investigated. A sample etched under conditions that cause a thicker damaged layer had a lower anisotropy field (Hk) and a lower easy axis coercive force (Hc). This indicates that RIBE degrades magnetic anisotropy in the Ni-Fe films.
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