Abstract
Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so that the transport is not ballistic. Non-ballistic dissipative device modelling requires the full complexity of the non-equilibrium Green Function (NEGF) method. The role of causality in obtaining spectral sum rule-conserving approximations to the electron-phonon self-energies is demonstrated and applications given for wrap-round gate silicon nanowire field effect transistors. Causality violations give erroneous density of states and current densities.
Highlights
Non-Equilibrium Green Function (NEGF) modelling is important for studying future limiting scale transistors such as the gate-all-around nanowire field effect transistor (GAA NWFET [1])
Often Δ(E) is neglected: we show here that this strategy may lead to serious errors in the local density of states (DOS) and estimates of dissipation
Valid inelastic self-energy models are required for the non-equilibrium Green Function (NEGF) modelling of nanowires
Summary
Non-Equilibrium Green Function (NEGF) modelling is important for studying future limiting scale transistors such as the gate-all-around nanowire field effect transistor (GAA NWFET [1]). Such devices (Fig.1) were once thought to exhibit ballistic transport [2,3] that requires only a simple NEGF formalism. Published under licence by IOP Publishing Ltd doi:10.1088/1742-6596/526/1/012001
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