Abstract
This work demonstrates a method to form 1-D ethylammonium lead iodide (EAPbI3) thin-films by dimensional down-conversion of 3-D methylammonium lead iodide (MAPbI3) perovskite. The process leverages cation-exchange that occurs during exposure to ethylamine vapor and subsequent annealing. Based on the extensive materials characterization, a detailed mechanism of the transformation is proposed. The transformation also improves the morphology of the films, yielding compact EAPbI3 films with roughness of 50-100 nm, low-pin-hole density, and grain-size of 1-3 µm. The process can be used to fabricate various EAPbI3 optoelectronic devices. Since lower dimensional perovskites are more stable against moisture than MAPbI3, the process can also be used to fabricate 3D-1D graded perovskite interfaces for materials study and to stabilize MAPbI3 solar cells with a protective outer layer of EAPbI3.
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