Abstract

Substitution of Ga3+ by [Zn0.5Ti0.5]3+ in MgGa2O4 improved the comprehensive properties of the resultant spinel. A continuous solid solution with a spinel structure was formed in Mg(Zn0.5Ti0.5)2xGa(2−2x)O4 (0 ≤ x ≤ 1); here, Zn2+ occupied the tetrahedral 8a site while Ti4+ occupied the octahedral 16d site, resulting in a decrease in the degree of inversion λ from 0.86 to 0. The optimal sintering temperature decreased from 1460 °C to 1220 °C, and the dielectric constant (εr) increased from 8.8 to 14.9; these changes could be ascribed to the greater polarizability of [Zn0.5Ti0.5]3+ relative to that of Ga3+. The temperature coefficient of resonant frequency (τf) of the material remarkably increased from −64.1 ppm/°C to −16.8 ppm/°C, which may be attributed to the increase in dielectric polarizability/molecular volume, bond energy, and bond valence in B-sites. The high-quality factor (Q × f) slightly decreased from 89,253 GHz to 73,432 GHz with decreasing λ and packing fraction. Optimal microwave dielectric properties were obtained from the sample with x = 1 and sample sintered at 1220 °C; in this case, εr = 14.9, Q × f = 73,432 GHz, and τf = −16.8 ppm/°C.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.