Abstract
• Solar cells based on Kesterite-type absorber layers are the only critical raw material (CRM) free thin film PV technology. • Quaternary chalcogenide semiconductors, e.g. Cu 2 ZnGeS 4 /Se 4 or Cu 2 ZnSiSe 4 show band gap energies between 1.5 eV and 2.2 eV. • Flexible bandgap energy tuning in compound semiconductors is possible by cation and anion mutation (alloying). • Different alloying schemes (e. g. anion alloying or cation alloying) show various special features (e. g. miscibility gap).
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