Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS3

Abstract

Quasi‐1D ternary semiconductors have attracted considerable attention recently because of their additional bandgap engineering deriving from the variable stoichiometry. Herein, SbBiS3single crystals are successfully synthesized by chemical vapor transport (CVT) method. The basic characterizations combined with theoretical calculations reveal that SbBiS3semiconductor has an intrinsically low symmetry structure and in‐plane anisotropy of optical absorption. Significantly, the bandgap of SbBiS3shows a blue‐shifted compared to the bandgaps of binary Sb2S3and Bi2S3. Moreover, the quasi‐1D SbBiS3‐based photodetector shows a wide‐spectrum photosensitivity (360–1064 nm), a fast response speed (τrise≈ 10 μs andτdecay ≈ 94 μs) at 532 nm, a high photoresponsivity (6.82 A W−1) at 360 nm. In addition, the photodetector exhibits an anisotropic photocurrent ratio up to 1.12 at 808 nm. The work demonstrates the SbBiS3prepared by cationic alloy is a promising candidate for the application of polarized optoelectronics.