Abstract
In this paper, the local cathodoluminescence method was used to study the characteristics of the SiO2-Si interface, the change of its properties during oxidation, and the influence of the type of silicon conductivity on its properties. This research shows that the first phase of silicon oxidation is the formation of amorphous silicon layers on the silicon surface and the appearance of silicon clusters in the natural silicon oxide. Cathodoluminescence gives the possibility of finding the presence of point defects in silicon oxide and silicon and of studying the distribution of such defects on the surface and in the depth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
