Abstract
Orientation-patterned (OP) GaAs crystals are very promising for their use in nonlinear optical applications. In particular, mid-infrared and terahertz lasers can be generated by frequency conversion from shorter-wavelength sources. However, the quality of the crystals is crucial for high conversion efficiency, as the presence of defects with electrooptical signatures can contribute to optical losses. The study of these defects is a step toward the improvement of OP-GaAs crystals. We present here a spectroscopic cathodoluminescence study of the distribution of the main defects. Tentative relations between defects and the optical propagation losses are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
