Abstract
We report the results of low-temperaturephotoluminescence, room-temperature cathodoluminescence (CL)and scanning CL and electron microscopy of self-organizedCdTe/ZnTe quantum dot (QD) structure. The in-depth profiling CLinvestigations were used to identify the microscopic origin ofthe CL emissions observed at 2.13, 2.0-2.1 and 2.25 eV.In particular, we distinguish between CL emissions originatingfrom the QD region of the structure and from the underlyingbuffer layers. Based on these measurements we assign the2.13 eV CL band to the wetting layer and the 2.0-2.1 eV band to the QDemission. From the study of the in-plane and in-depth CLcharacteristics we demonstrate large in-plane fluctuations ofthe CL intensity and discuss their origin.
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