Abstract
Spatially and spectrally resolved cathodoluminescence in the scanning electron microscope is a very powerful technique for studying the optical properties of semiconductor structures, especially low-dimensional structures (structures with nanometre-sized features). The technique is generally nondestructive and can be combined with the normal imaging capabilities and analysis possibilities of the scanning electron microscope. This article gives an introduction to the technique and a number of examples of the possibilities of the technique.
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