Abstract
The lifetime of non-equilibrium carriers in n-type unintentionally doped ZnOincreases when the sample is exposed to the electron beam of a scanningelectron microscope. This is observed by studying the ZnO cathodoluminescence(CL) spectra at different irradiation time durations and temperatures. Wefound that the decrease in the CL spectra’s peak intensity is related to athermo-activated energy barrier, determined by the calculated activation energy value of259 ± 30 meV. This energy value comes close to the defect energy level of the zinc interstitial,which is possibly the nature of the energy barrier responsible for this decrease.
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