Abstract
AbstractWe analyzed the cathodoluminescence of zinc‐blende GaN/AlN quantum dots grown by two different methods. Method A being droplet epitaxy, a vapor liquid solid process and method B being Stranski‐Krastanov growth. At an equal quantum dot density of 1011 cm‐2, droplet epitaxy grown quantum dots have shown a luminescence intensity which was more than one order of magnitude higher than the one of Stranski‐Krastanov quantum dots. Furthermore, we revealed a dependency between the quantum dot emission energy and the amount of deposited Ga. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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