Abstract
Abstract The cathodoluminescence emission of Yb3+ ions in zinc telluride produced by implantation of ytterbium ions in samples of differing degrees of non-stoichiometry has been studied as a function of implantation and annealing parameters. Successful implantation of ytterbium in zinc telluride was found to be strongly dependent on the non-stoichiometry present in the lattice. Because the ytterbium ions can occupy interstitial sites or zinc substitutional sites the relative intensities of emission lines in the characteristic ytterbium spectrum (980–1100 nm) can be changed by controlling the annealing treatment in the temperature range 250°–500°C. Annealing at higher temperatures was found to reduce the total ytterbium emission intensity. To produce the most intense, well-structured ytterbium emission lines it is essential to implant tellurium rich material at as low a temperature as possible.
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