Abstract
AbstractCathodoluminescence has been applied to study 1‐μm‐thick Zn1‐xMgxSySe1‐y alloys grown by molecular beam epitaxy. The observed cathodoluminescence spectra show the main band transition at 2.9 eV and a broad defect band around 2.2 eV. The analysis of the band intensities at different electron‐beam current densities shows different saturation behaviour of the defect band intensities for the samples. The saturation intensity and the luminescence lifetime correlate with the defect luminescence intensity and concentration. This is the reason of luminescence colour changes in dependence on the electron‐beam current density. These results were applied to comparative evaluation of the luminescent defect density. A respective cathodoluminescence imaging was used for observation of structural defects in the surface plane and at the ZnMgSSe‐layer/GaAs‐buffer interface. It enables an express non‐destructive analysis of defect density in the layers and heterostuctures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
