Abstract
A cathodoluminescence (CL) based method for measuring the minority carrier diffusion length (L) and reduced recombination velocity(Sred) of an individual grain boundary is presented. The technique is based on the van Roosbroeck model for the steady-state carrier distribution near a free surface in a semi-infinite solid. Values of L = 0.55±0.03 μm and Sred = 0.23±0.02 are obtained for vapour grown p-type CdTe. The effect of the electron beam generation volume on the accuracy of measurement is also discussed. Intermediate beam voltages (e.g. 15 kV for CdTe) are likely to produce the most reliable results. The method can be used to characterise the electrical activity of grain boundaries in thin-film solar cells.
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