Abstract
Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018 cm−3 to 3.3 ×1018 cm−3 along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6–8 × 1017 cm−3 along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor–solid and vapor–liquid–solid processes.
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