Abstract
Abstract A novel method for obtaining simultaneous imaging of screw and edge dislocations in II–VI compound semiconductors with a wurzite structure is developed. The method uses the facts that screw dislocations exhibit “dislocation luminescence” which is weakly absorbed by the sample and that edge dislocations strongly reduce the intensity of the intrinsic luminescence. We use a defocused position of the ellipsoidal mirror to increase the collection efficiency of dislocation luminescence working with panchromatic imaging. As an example we present results of the investigations of dislocation half-loops in scratched and indented CdS.
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