Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates

Abstract

Plain-view bright-field transmission electron microscopy and cathodoluminescence are used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and nonporous SiC substrates. It is shown that the use of porous substrate reduces the mosaic structure of the films. This finding supports the compliance of porous SiC substrates, which was proposed by the authors earlier.