Abstract
ABSTRACTEpitaxial Lateral Overgrowth (ELO) is an effective method to reduce dislocations in heterostructures with large lattice mismatch. This method has been widely used to improve the quality of GaN layers. We present herein a study of the properties of ELO GaN layers grown by HVPE from an MOVPE GaN buffer layer. Cathodoluminescence shows a strong enhancement of the luminescence emission in the ELO regions, where TEM has proven the absence of dislocations. Local cathodoluminescence spectra show that this enhancement is mostly due to the yellow luminescence band. Besides Donor-Acceptor Pair recombination bands are observed in the near band gap spectral range. Raman data show that the ELO layers present a good crystalline quality. The Raman spectra did not reveal the presence of free carriers in concentration high enough to allow the presence of Longitudinal Optic Phonon Plasmon Coupled modes. The results are discussed in terms of the incorporation of impurities in the ELO layers together with the formation of compensating deep acceptors, probably VGa.
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