Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain

Abstract

The electrical and optical properties of stacking faults (SFs), introduced in 4H-SiC by plastic deformation in the brittle domain of temperature (823 K and 973 K), were studied by cathodoluminescence and electron beam induced current (EBIC) methods. As expected from previous studies, at 973 K, all the SFs generated were found to be double stacking faults (DSFs) and at 823 K, the latter also constituted the major part of the defects. Rather surprisingly, in addition to DSFs, single stacking faults (SSFs) were revealed but only very near the defect nucleation area. Moreover, an inversion of DSF EBIC contrast was obtained which designates these defects as relevant candidates for electron guides to enhance detector performances. Eventually, no dark contrast corresponding to the casual recombination activity of the partial dislocations dragging the DSFs was observed.