Abstract
A new method for diagnosing integrated circuits by mapping leakage defects has been developed. It is based on the cathodic plating of metallic ions, such as nickel, on leaky devices. The method is simple, reliable, and nondestructive, and makes defects easy to spot. Also, it avoids many of the drawbacks of the anodic method of defect mapping. Correlation with I–V characteristics is shown. The method has been applied to the study of transistor pipes and swirl defects in silicon substrates. In particular we have used this method to demonstrate that dislocations in silicon can lead to transistor leakage but not necessarily always through enhanced diffusion. The method is complementary to the anodic mapping method; for many applications, each of the methods has its limitations.
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