Abstract
Cadmium Selenide thin films have been deposited on glass/fluorine-doped thin oxide substrate using a simple potentiostatic two-electrode electrodeposition configuration. The results of the structural analysis showed that CdSe is nanocrystalline with a cubic zinc blend structure. The energy band gap values of as-deposited CdSe thin films were found to (2.02–1.69) eV, while those of the annealed films (1.95–1.66) eV as the deposition voltage increased from (1935–1970) mV. These films have n-type conductivity for both as-deposited and annealed samples. Surface morphology analysis showed that the glass substrate was covered well by CdSe thin films. The average surface roughness of CdSe thin films changed with voltage in the range of (39.0–75.0) nm for as-deposited films and (43.2–77.0) nm for the annealed films. The elemental composition analysis confirmed that both Cd and Se were present, and stoichiometric composition was observed at 1950 mV.
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