Abstract
Factors affecting the formation of ordered arrays of InAs quantum dots using the drop method on the surface of the GaAs substrate under conditions of MOCVD hydride epitaxy are investigated. The catalytic influence the substrate has on the pyrolysis of trimethylindium and arsine are analyzed by means of quantum chemistry. The energy parameters that characterize the pyrolysis of the investigated compounds under homogeneous and heterogeneous conditions are evaluated quantitatively. The possibility of substantially lowering the temperature of the formation of InAs quantum dots by the considered method on GaAs substrates is shown and confirmed experimentally.
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