Abstract
Zinc gallate (ZnGa 2O 4) nanowires were directly grown on the amorphous carbon-coated silicon substrates using a facile chemical vapor deposition method without any metal catalysts. The growth mechanism can be attributed to a self-organization vapor–liquid–solid (VLS) process. The amorphous carbon layer plays an important role in the nucleation and growth process of the ZnGa 2O 4 nanowires. The photoluminescence (PL) of the nanowires shows a broad, strong green emission band centered at 532 nm and a weak UV emission band at 381 nm, which can be attributed to a large amount of ionized oxygen vacancies and the combination of Ga 3+ ions with free electrons in coordinated oxygen vacancies, respectively.
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