Abstract

The catalytic decomposition processes of PH3 on heated tungsten surfaces were studied to clarify the mechanisms governing phosphorus doping into silicon substrates. Mass spectrometric measurements show that PH3 can be decomposed by more than 50% over 2000 K. H, P, PH, and PH2 radicals were identified by laser spectroscopic techniques. Absolute density measurements of these radical species, as well as their PH3 flow rate dependence, show that the major products on the catalyst surfaces are P and H atoms, while PH and PH2 are produced in secondary processes in the gas phase. In other words, catalytic decomposition, unlike plasma decomposition processes, can be a clean source of P atoms, which can be the only major dopant precursors. In the presence of an excess amount of H2, the apparent decomposition efficiency is small. This can be explained by rapid cyclic reactions including decomposition, deposition, and etching to reproduce PH3.

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