Abstract

The authors demonstrate that Ge(100) surfaces containing metallic particles are etched anisotropically in water. This originates from the catalytic reduction of dissolved oxygen (O2) in water to water molecules (H2O) on the metallic particles, which is followed by the enhanced oxidation of Ge around the particles. The soluble nature of Ge oxide (GeO2) in water promotes the formation of inverted pyramidal etch pits composed of (111) microfacets. On the basis of the results, the authors propose strategies for avoiding unwanted surface roughening during the wet cleaning of Ge.

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