Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures.

Rimantas Gudaitis,Šarūnas Jankauskas,Algirdas Lazauskas,Šarūnas Meškinis

doi:10.3390/ma13245630

Rimantas Gudaitis, Šarūnas Jankauskas + Show 2 more

Open Access

https://doi.org/10.3390/ma13245630

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Journal: Materials	Publication Date: Dec 10, 2020
Citations: 13	License type: CC BY 4.0

Affiliation: Kaunas University of Technology

Abstract

In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

Highlights

Graphene is a monolayer or several layers of hexagonally shaped carbon atoms [1]
It was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave plasma-enhanced chemical vapor deposition (PECVD) process
Graphene was synthesized on the Si(100) substrates using microwave PECVD

Summary

Introduction

Graphene is a monolayer or several layers of hexagonally shaped carbon atoms [1]. This 2D carbon nanomaterial has achieved considerable interest due to the huge mobility of electrons and holes, optical transparency, flexibility, and chemical inertness [1,2,3]. A complicated graphene transfer process is one of the main limitations preventing the broader use of graphene in semiconductor device technology. The transfer process can cause wrinkled or rippled surface morphology of graphene [17]. In this case, the control of the graphene film or graphene-semiconductor interface properties becomes a tricky task.

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