Abstract
We present here the results on the preparation and characterization of highly oriented ZnO microrods fabricated on SiC substrate via a vapor solid route. These ZnO microrods grow along the c-axis perpendicularly to the substrate and are well separated from each other. Photoluminescence (PL) due to the band-gap emission (centered at 380 nm) and defect-related deep band emission (centered at 530 nm) were observed. Tunable PL intensities of these two bands were achieved by acid etching for varying durations.
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