Abstract
The catalyst-free metal organic vapor phase epitaxial growth of InP nanowires on silicon (001) substrate is investigated using selectively grown GaAs buffer layers in V-shaped trenches. A yield up to 70% of nanowires is self-aligned in uncommon 〈112〉 directions under the optimized growth conditions. The evolution mechanism of self-aligned 〈112〉 directions for nanowires is discussed and demonstrated. Using this growth method, we can achieve branched and direction switched InP nanowires by varying the V/III ratio in situ. The structure of the nanowires is characterized by scanning electron microscope and transmission electron microscopy measurements. The crystal structure of the InP nanowires is stacking-faults-free wurtzite with its c axis perpendicular to the nanowire axis.
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