Catalyst-free chemical vapor deposition of Ge wires from readily available precursors

Abstract

The present study aimed to grow Ge wires without using a catalyst by chemical vapor deposition technique from readily available precursors, solid GeO2 and liquid ethanol. The growth species (possibly GeO) was in-situ generated by the reactions between solid GeO2 and ethanol decomposition products at 1200 K. Ge wires were grown at the edge of a Si 〈100〉 substrate at 900 K from the reactive species carried by Argon flow. The growth of wires was discussed in terms of reduction reactions, supersaturation, and boundary layer theory.