Abstract
In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong (01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.
Highlights
A new concept of growing large-area single-crystal β-Ga2O3 nanowires on sapphire substrate was demonstrated by using predeposited Au nano seeds as catalysts via metalorganic chemical vapor deposition (MOCVD), which may potentially shed some light on solving this problem
We studied the growth process of β-Ga2O3 nanowires by performing multiple characterizations to observe the morphology, crystal structure, crystalline quality, and the growth direction of β-Ga2O3 nanowires by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction(SAED), X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy
TMGa was flowed for 1 min to predeposit gallium on the substrate before introducing the water vapor. β-Ga2O3 nanowires were synthesized at a temperature of 690 ◦C with VI/III flow ratio of 300
Summary
A new concept of growing large-area single-crystal β-Ga2O3 nanowires on sapphire substrate was demonstrated by using predeposited Au nano seeds as catalysts via MOCVD, which may potentially shed some light on solving this problem. A commercial horizontal-flow MOCVD system was used to grow β-Ga2O3 nanowires on c-plane sapphire substrates.
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