Abstract
A previous study [1] on arsenic depth profiling in the silicon germanium alloys based structures using numerical approach was able to resolve mass interference between 28Si75 As-and (74Ge29Si−, 73Ge30Si−, 74Ge28Si1H−, 73Ge29Si1H−, 72Ge30Si1H−), demonstrated that an accurate arsenic profile with enough dynamic range can be obtained. The background subtraction algorithm is using un-doped silicon germanium alloy with lightest isotopes of Ge and Si with ion cluster 28Si70Ge as reference. However, this numerical approach is not suitable for the current case study on mass interference of germanium and arsenic due to absence of 70Ge implant, there is no available reference signal for background subtraction. In this paper, quantification approach was traced using 28Si75 As− and the abnormal profile was investigated using 30Si75 As− with high impact energy (hence high current) ion beam.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
