Abstract
AbstractIn this letter, a fully integrated subnanosecond high‐voltage impulse generator using 2‐μm GaAs HBT process is presented. The core circuit consists of a cascoded HBT pair with an inductor and it works on two principles: a faster transition can be obtained from a digital logic input into the HBT and a differentiation of the very fast transition current using the inductor to generate a large voltage at the output. Measurement results show the generated impulses have a tunable peak voltage between 0.5 and 3.2 V with a full‐width‐half‐maximum (FWHM) of 100 ps. The impulse generator is biased from a 3.3 V battery supply and consumes 15 mW at 1 MHz pulse repetition rate (PRF). © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1683–1685, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25295
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
