Abstract
Radio frequency (RF) power supplies are important equipment in the semiconductor manufacturing process, and class E power amplifiers are widely used in RF power supplies due to their low switching losses. However, under the influence of parasitic parameters of class E power amplifier, soft switching is difficult to achieve. In RF high power applications, RF drivers are also difficult to design. In this paper, a soft-switching optimization method and a switch input impedance measurement method are proposed. The cascade structure of class E power amplifier is realized, and the sinusoidal output of the previous class E power amplifier is used to drive the second-stage class E power amplifier. In order to verify the validity of the theory, a class E power amplifier experimental prototype is built, with an output power of 2kW and an efficiency of 80.19%.
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