Cascaded low noise amplifier at 15 GHz for RF — Front end application

Abstract

This paper present the design of 2-stage cascaded 15 GHz low noise amplifier (LNA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz, this LNA is designed at 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 3 V and DC bias of -0.2 V. The LNA has an input and output return loss at 26 dB and 23 dB respectively. Having a current consumption of 58 mA, this LNA achieves a small signal gain of 19.4 dB and noise figure is 1.4dB.